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T Pulse width 5. IGBT’s optimized for specific application conditions.

IRG4PC50UD datasheet & applicatoin notes – Datasheet Archive

Industry standard TOAC package. Diode Maximum Forward Current. Generation 4 IGBT design provides tighter. Diode Peak Reverse Recovery Current. Designed datashret be a “drop-in” replacement for equivalent. Case-to-Sink, flat, greased surface. Energy losses include “tail” and. Q gTotal Gate Charge nC. Total Gate Charge turn-on.

Datasheet «IRG4PC50UD»

Optimized for high operating. Zero Gate Voltage Collector Current. IGBT’s optimized for specific application conditions. Measured 5mm from package. Measured 5mm from package.


IRG4PC50UD Datasheet(PDF) – International Rectifier

V CE on typ. Ga te d rive a s spe cified. Macro Waveforms for Figure 18a’s Test Circuit. Mounting Torque, or M3 Screw.

Diode Peak Rate of Fall of Recovery. Diode Reverse Recovery Charge. V CE on typ.

Designed to be a “drop-in” replacement for equivalent. Diode Reverse Recovery Charge. Soldering Temperature, for 10 sec. T Pulse width 5. Du ty c ycle: Minimized recovery characteristics require.

Clamped Inductive Load Test. Gate – Emitter Charge turn-on.

Junction-to-Ambient, typical socket mount. Diode Maximum Forward Current. Tu rn -on lo sses inclu de.

D im en sion s in M illim eters a nd Inches. Diode Forward Voltage Drop. Gate – Emitter Charge turn-on. Du ty c ycle: Generation 4 IGBT’s offer highest efficiencies. Visit us at www. irg4pc50yd

IRG4PC50UD Datasheet

Industry standard TOAC package. Total Gate Charge turn-on. Tu rn -on lo sses inclu de.